Menu Bar

Main Window

Trash
electromaniacs.com Theme Home News Downloads Tutorials WebLinks Login to Electromaniacs

  Menu Bar
 
Main Menu
Home
Forum
Live Chat
Blog
News
News Feeds
Links
How To
Online tools
Electronics lessons
Download Zone
Subscription
Search
FAQs
Contact Us
Forum Wrapper
Books store
Jobs
SiteMap
About us
Learnfobia
Statistics
Members: 3887
News: 247
Web Links: 21
Visitors: 3125594
Your IP
You are connecting to this site from: 54.204.90.135
jstatus
 
     
Home arrow Blog arrow SiGe power transistor operates to 5 GHz
 
 
SiGe power transistor operates to 5 GHz PDF Print E-mail
Written by Administrator   

SiGe power transistor operates to 5 GHz

 RQG2003 is a high-performance power SiGe HBT intended for operation at 2.4 GHz and 5 GHz. In IEEE 802.11 a/b/g wireless LAN routers/terminals, RF tag readers/writers, digital cordless phones, and similar products, this power transistor can eliminate the power amplifier modules and monolithic microwave integrated circuits (MMICs) typically used to drive the transmitting antenna. As a result, it allows engineers to design systems that consume less power, are smaller, and cost less to build.

At 5.8 GHz, for example, the SiGe device has a power gain of 6.4 dB, a 1 dB gain compression power of 26.5 dBm, and a power addition efficiency of 33.6%. At 2.4 GHz, it provides a power gain of 13.0 dB, a 1 dB gain compression power of 26.5 dBm, and a power addition efficiency of 66%.

The RQG2003 is the first Renesas Technology product to use the double-trench structure, in which trench isolation and a conductive trench are formed in a single transistor area. This structure reduces the parasitic capacitance between the substrate and transistor that degrades high-frequency characteristics, resulting in a major improvement in power gain and power addition efficiency in the 2.4 GHz and 5 GHz bands. Also, the conductive trench is constructed in a way that connects the electrodes and substrate by means of via holes, making it possible to reduce the inductance originating from wire bonding, for improvement in power gain and power addition efficiency.

The RF power transistor is built with a SiGeC process, in which a SiGe base is doped with carbon, and has an optimized transistor pattern. These techniques have increased the collector current density and improved the 1 dB gain compression power by approximately 1.5 dBm compared with the HSG2002 device. The RQG2003 uses an optimal silver paste to achieve high reliability and conductivity for die bonding. A Sn-Bi (stannum-bismuth) compound is used for package electrode plating, providing a totally lead-free implementation.

The RQG2003 is available in the 8-pin WQFN0202 package. The device will be available in March, with a sample price of $0.87 each.





Reddit!Del.icio.us!Facebook!Slashdot!Netscape!Technorati!StumbleUpon!Newsvine!Furl!Yahoo!Ma.gnolia!
 
< Prev   Next >
Sponsored Links



 
  Privacy Policy